The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells
- 20 June 2006
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 21 (8), 1018-1021
- https://doi.org/10.1088/0268-1242/21/8/005
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertionJournal of Physics: Condensed Matter, 1999
- Reflectance study of the oscillator strength of excitons in semiconductor quantum wellsPhysical Review B, 1994
- Exciton delocalization in thin double-barrier GaAs/AlAs/(Al,Ga)As quantum-well structuresPhysical Review B, 1992
- Accurate theory of excitons in GaAs-As quantum wellsPhysical Review B, 1990
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989
- Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlatticesPhysical Review B, 1985
- Direct experimental observation of two-dimensional shrinkage of the exciton wave function in quantum wellsPhysical Review B, 1985