Activated channel conductivity in silicon inversion layers at high temperatures
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1), 91-97
- https://doi.org/10.1016/0039-6028(76)90118-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The channel conductivity in n-type Si inversion layers at very low electron densitiesSolid State Communications, 1975
- Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1975
- Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion LayersPhysical Review Letters, 1974
- Conduction in amorphous materialsElectronics & Power, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Conduction in non-Crystalline systemsPhilosophical Magazine, 1970
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968