Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10), 1043-1050
- https://doi.org/10.1007/bf02651979
Abstract
No abstract availableKeywords
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