Simultaneous RHEED–AES–QMS study on epitaxial Si film growth on Si(111) and sapphire (1̄102) surfaces by partially ionized vapour deposition
- 1 March 1979
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 16 (2), 366-368
- https://doi.org/10.1116/1.569952