Anisotropic phonon generation in GaAs epilayers and pn junctions
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12), 1295-1298
- https://doi.org/10.1016/0038-1101(78)90196-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Direct Observation of Phonons Generated During Nonradiative Capture in GaAsJunctionsPhysical Review Letters, 1978
- Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substratesJournal of Crystal Growth, 1977
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Monolithically integrated AlGaAs double heterostructure optical componentsApplied Physics Letters, 1974
- Theory of Thermal Conductivity of Solids at Low TemperaturesReviews of Modern Physics, 1961