Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
- 14 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (11), 826-827
- https://doi.org/10.1063/1.98825
Abstract
An interference mirror for use near 1.55 μm wavelength was constructed using InP and lattice-matched InGaAsP on an InP substrate with chemical beam epitaxy methods. The maximum reflectivity was 92.5% at 1.46 μm. The design value was 94.75% at 1.55 μm. The mirror was used as an output mirror in a synchronously pumped mode-locked Tl:KCl color center laser.Keywords
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