On the liquidus curve for GaN
- 15 December 1991
- journal article
- research article
- Published by Taylor & Francis in High Pressure Research
- Vol. 7 (1-6), 284-286
- https://doi.org/10.1080/08957959108245569
Abstract
A Quasi-Chemical Equilibrium approach was used to discuss the experimental results of three phase (Ga-GaN-N2) equilibrium conditions for the temperature range 1200-1580°C and pressure 0. 1-1. 45 GPa. The best fitting was obtained for the melting temperature of 2531 K which is in reasopable agreement with the value of 2791 K calculated by Van Vechten1.Keywords
This publication has 6 references indexed in Scilit:
- Liquidus calculations for III-N semiconductorsCalphad, 1984
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- The Equilibrium Pressure of N2 over GaNJournal of the Electrochemical Society, 1972
- Phase equilibria of III–V compoundsActa Metallurgica, 1963