Model Calculation of theq-Dependent Dielectric Function of Some Zinc-Blende Semiconductors

Abstract

A generalization of the Penn-model dielectric function containing two energy gaps is used to calculate $\epsilon \mathrm{}\left(q\right)\mathrm{}$ for a number of semiconductors of the zinc-blende family. The results are in reasonable agreement with those of studies based on complete-zone integration. We show the importance of including the details of the band structure in discussing $\epsilon \mathrm{}\left(0\right)\mathrm{}$.