Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
- 6 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (1), 64-66
- https://doi.org/10.1063/1.107670
Abstract
We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.Keywords
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