Recombination enhanced annealing effect in AlGaAs/GaAs remote junction heterostructure lasers
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8), 674-684
- https://doi.org/10.1109/jqe.1979.1070098
Abstract
No abstract availableKeywords
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