Design Consideration in High Temperature Analog CMOS Integrated Circuits
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 9 (3), 242-251
- https://doi.org/10.1109/tchmt.1986.1136646
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Small-signal drain conductance of MOSFET in saturation region—a simple modelElectronics Letters, 1986
- High-temperature diffusion leakage-current-dependent MOSFET small-signal conductanceIEEE Transactions on Electron Devices, 1984
- Electrical Characteristics of Large-Scale Integration Silicon MOSFET's at Very High Temperatures,Part III: Modeling and Circuit BehaviorIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
- Problems in Precision Modeling of the MOS Transistor for Analog ApplicationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1984
- Matching properties, and voltage and temperature dependence of MOS capacitorsIEEE Journal of Solid-State Circuits, 1981
- Performance of Digital Integrated Circuit Technologies at Very High TemperaturesIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1980
- Integrated Circuit Characteristics at 260°C for Aircraft Engine-Control ApplicationsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1979
- Extension of High-Temperature ElectronicsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1979
- Extreme Temperature Range MicroelectronicsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
- Design considerations in single-channel MOS analog integrated circuits-a tutorialIEEE Journal of Solid-State Circuits, 1978