Dislocation Planes in Semiconductors

Abstract

Dislocations and mainly dislocation planes, as the most important nonchemical imperfections in semiconductor crystals, are discussed from the point of view of their influence on carrier transport. After a short review of the general properties of grain boundary planes of medium angle of misfit, the electrical effects are discussed, including the barrier behavior, the band structure, and lifetime anisotropy. Devices tructures based on these properties of dislocation planes are described among which the dislocation field effect transistor shows promising features as the first temperature independent transistor in the range 300°K to 2°K.