Mode-locked picosecond pulse generation from high power phase-locked GaAs laser arrays
- 15 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4), 357-359
- https://doi.org/10.1063/1.94774
Abstract
A diffraction-coupled laser array has been actively mode locked in an external cavity to yield Gaussian pulses as short a 61-ps full width at half-maximum with a peak power of 1.1 W and an average power of 0.07 W. The array consists of 10 lasers, each 3 μm wide with 9-μm center to center spacing. It emits with a stable double-lobed far-field pattern characteristic of the out-of-phase coupling between neighboring lasers. These arrays may be useful where high peak as well as high average optical powers are required.Keywords
This publication has 22 references indexed in Scilit:
- High-power multiple-stripe injection lasers with channel guidesIEEE Journal of Quantum Electronics, 1982
- Schottky barrier restricted GaAlAs laserElectronics Letters, 1982
- A new structure for high-powered injection lasersJournal of Applied Physics, 1981
- Active mode locking of double heterostructure lasers in an external cavityJournal of Applied Physics, 1981
- Modelocking of Semiconductor Laser DiodesJapanese Journal of Applied Physics, 1981
- Mode locking of strip buried heterostructure (AlGa)As lasers using an external cavityJournal of Applied Physics, 1980
- Experimental and analytic studies of coupled multiple stripe diode lasersIEEE Journal of Quantum Electronics, 1979
- High-power coupled-multiple-stripe phase-locked injection laserApplied Physics Letters, 1979
- Phase-locked semiconductor laser arrayApplied Physics Letters, 1978
- Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructuresApplied Physics Letters, 1978