Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Abstract

A dual 1200 V, 400 A power module was built in a half-bridge configuration using 16 silicon-carbide (SiC) 0.56 cm ² DMOSFET die and 12 SiC 0.48 cm ² JBS diode die. The module included high temperature custom packaging and an integrated liquid cooled heat sink while conforming to the footprint and pinout of a commercial dual IGBT package. Die encapsulant was not used, to allow data collection by infrared thermal imaging. The module was DC tested at currents up to 400 A and coolant temperatures up to 100°C. Switching was evaluated in a boost converter at load power levels up to 25 kW and at frequencies up to 30 kHz with coolant temperatures up to 80°C. Acceptable current sharing between MOSFET die was observed over the switching frequency and coolant temperature ranges. Package thermal resistances and MOSFET and diode power losses were characterized. Results were compared to those simulated for a 400 A IGBT module.