Abstract
The influence of H on the local structure of N-containing amorphous diamondlike films (a-CNx:H) is reported. The samples were prepared by rf sputtering of graphite in a N2, Ar, and H2 atmosphere. The chemical bonding of C and N atoms was inferred by analyzing the C 1s and N 1s electronic core-level by x-ray photoelectron spectroscopy. Hydrogen free films present N 1s peaks with a “doublet”, located at 398.2–400.5 eV. When H is introduced in the preparation chamber, the doublet evolves to a single wider band located at 399.1 eV. This new band becomes dominant when increasing H2 partial pressure, completely hiding the original structure. High H2 partial pressure interrupts the growing network formed by N and C due to the attachment of H to N and/or C. Furthermore, the experimental results suggest that the possibility of formation of the C3N4 phaselike is inhibited by the presence of hydrogen.