Effects of uniaxial stress on the Eo1-peak of silicon
- 1 December 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (24), 2229-2232
- https://doi.org/10.1016/0038-1098(71)90636-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Wavelength-Modulation Spectra of Some SemiconductorsPhysical Review B, 1970
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Optical Field Effect in SiliconPhysical Review B, 1965
- Polarization Dependence of the Piezoreflectance in Si and GePhysical Review Letters, 1965
- Dependence of the Optical Constants of Silicon on Uniaxial StressPhysical Review Letters, 1965
- Das Reflexionsvermögen von Germanium- und Silizium-Einkristallen bei elastischer DeformationPhysica Status Solidi (b), 1965
- Deformation Potentials in Silicon. III. Effects of a General Strain on Conduction and Valence LevelsPhysical Review B, 1963
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Optical investigation of the band structure of Ge-Si alloysJournal of Physics and Chemistry of Solids, 1961