Abstract
Sintered α-SiC samples with 0.3% Al based additives have been deformed by three point bending at 1600[ddot]C. Interactions between glide dislocations (Shockley dislocations) and perfect screw dislocations perpendicular to the slip planes have been analysed by transmission electron microscopy. Depending on the mobility and the character of the partials, different mechanisms have been found namely: cross-slip of basal dislocations onto prismatic planes and sources for partial dislocations. Parameters of their activation are discussed.