Epitaxial growth of β-SiC single crystals by successive two-step CVD
- 1 December 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 70 (1-2), 287-290
- https://doi.org/10.1016/0022-0248(84)90275-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Vapor-Phase Deposition of Beta-Silicon Carbide on Silicon SubstratesJournal of the Electrochemical Society, 1973
- Growth, Texture, and Surface Morphology of SiC LayersJournal of the Electrochemical Society, 1971
- β-Silicon Carbide FilmsJournal of the Electrochemical Society, 1969
- Some Properties of Vapor Deposited SiCJournal of the Electrochemical Society, 1967