Dielectric Constant of an Exchange-Polarized Electron Gas and the Metal-Semiconductor Transition in Doped EuO
- 2 October 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 29 (14), 939-943
- https://doi.org/10.1103/physrevlett.29.939
Abstract
This paper reports calculations of the linear responses (the dielectric constant and the magnetic susceptibility) of an electron gas interacting through an exchange interaction with a set of localized magnetic moments. This allows one to account for the metal-semiconductor transition which has been observed in moderately doped EuO, in agreement with experimental data.Keywords
This publication has 10 references indexed in Scilit:
- Insulator-Metal Transition and Long-Range Magnetic Order in EuOPhysical Review B, 1972
- Conductivity Studies in Europium OxidePhysical Review B, 1972
- Dielectric Screening and the Mott Transition in Many-Valley SemiconductorsPhysical Review B, 1971
- Exchange-Induced Autoionization in Eu-Rich EuOPhysical Review Letters, 1971
- Temperature and Magnetic Field Dependence of the Conductivity of EuOIBM Journal of Research and Development, 1970
- Transport in Gd-Doped EuOJournal of Applied Physics, 1970
- Magnetic semiconductorsC R C Critical Reviews in Solid State Sciences, 1970
- Infrared dielectric dispersion in divalent europium chalcogenidesJournal of Physics and Chemistry of Solids, 1969
- Static Phenomena Near Critical Points: Theory and ExperimentReviews of Modern Physics, 1967
- The transition to the metallic statePhilosophical Magazine, 1961