Examination of models for Zn diffusion in GaAs

Abstract

Concentration profiles of Zn in GaAs have been calculated for two models: the Frank–Turnbull model involving Schottky defects and the ‘‘kick-out’’ model involving gallium Frenkel defects. Comparison with experimental data shows that the latter model gives a better description. This indicates that Frenkel defects play a predominant role in this diffusion process.