Examination of models for Zn diffusion in GaAs
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9), 5055-5058
- https://doi.org/10.1063/1.332777
Abstract
Concentration profiles of Zn in GaAs have been calculated for two models: the Frank–Turnbull model involving Schottky defects and the ‘‘kick-out’’ model involving gallium Frenkel defects. Comparison with experimental data shows that the latter model gives a better description. This indicates that Frenkel defects play a predominant role in this diffusion process.Keywords
This publication has 7 references indexed in Scilit:
- A study of the effects of annealing, zinc diffusion and copper diffusion on the defect structure of silicon-doped gallium arsenideJournal of Materials Science, 1982
- Diffusion of zinc in gallium arsenide: A new modelJournal of Applied Physics, 1981
- Anomalous diffusion profiles of zinc in GaAsJournal of Materials Science, 1972
- Engineering Applications of Current and Potential Distributions in Disk Electrode SystemsJournal of the Electrochemical Society, 1971
- Time-Dependence of Zinc Diffusion in Gallium Arsenide under a Concentration GradientJournal of the Electrochemical Society, 1971
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956