Far-infrared absorption by excitons in silicon
- 31 January 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 25 (4), 217-219
- https://doi.org/10.1016/0038-1098(78)90216-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A new method in the theory of indirect excitons in semiconductorsSolid State Communications, 1976
- Temperature dependence of the electron-hole-liquid luminescence in SiPhysical Review B, 1976
- Far-infrared absorption study of exciton ionization in germaniumPhysical Review B, 1976
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Valley-Orbit Splitting of Free Excitons? The Absorption Edge of SiPhysical Review Letters, 1970
- Recombination Kinetics of Excitonic Molecules and Free Excitons in Intrinsic SiliconPhysical Review B, 1970