Application of AlGaAs/GaAs HBTs to high-speed CML logic family fabrication
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (4), 625-631
- https://doi.org/10.1109/16.22466
Abstract
Discusses the design, fabrication, and performance of the first small-scale integrated logic family, including a current-mode-logic (CML)N inverter, OR/NOR, NAND/OR. exclusive OR/NOR gates, and master-slave flip-flops, implemented using self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The HBTs incorporated in the ICs (integrated circuits) are based on a 2.5-μm emitter design rule and exhibit a current gain of 40, a cutoff frequency of 50 GHz, an estimated CML gate-propagation delay time of 24.7 ps, and a non-threshold-logic gate-propagation delay time of 12.3 ps. Successful operation of the logic circuits has been predicted using a SPICE-F simulator and verified experimentallyKeywords
This publication has 5 references indexed in Scilit:
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHzIEEE Transactions on Electron Devices, 1987
- AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceElectronics Letters, 1986
- Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layerElectronics Letters, 1986
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982