Direct observations of defects in implanted and postannealed silicon wafers

Abstract

We have used transmission electron microscopy to study crystalline defects in Si wafers which were first implanted with Si ions to produce an amorphous surface layer and then annealed to produce epitaxial regrowth. The original high degree of crystalline perfection is not entirely recovered. In the implanted layer, small defect clusters, interstitial loops, and large half‐loops have been observed. The density, distribution, and characteristics of these defects have been determined.