Uncooled InSb/In1−xAlxSb mid-infrared emitter
- 2 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18), 2433-2435
- https://doi.org/10.1063/1.111981
Abstract
Using heterostructures of InSb/In1−xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5–5.8 μm and an internal efficiency of 0.2%.Keywords
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