First-Principles Calculations on Mg Impurity and Mg–H Complex in GaN
- 1 July 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (7A), L807
- https://doi.org/10.1143/jjap.35.l807
Abstract
First-principles calculations are performed in order to investigate the atomic geometry and stability of the Mg impurity and Mg–H complex in GaN. We find that a doped Mg atom is stable at a Ga substitutional site with only slight lattice relaxation, suggesting that the Mg impurity induces a shallow acceptor level. It is also found that this Mg impurity forms a very stable complex with an incorporated hydrogen; the hydrogen atom intervenes between the N and Mg atoms to form the stable Mg–H complex. The formation of this stable Mg–H complex is expected to be the reason for the experimental result that the acceptor is passivated by the hydrogen. Local vibrational frequencies of the Mg–H complexes are also discussed.Keywords
This publication has 18 references indexed in Scilit:
- Structures of Steps and Appearances of {311} Facets on Si(100) SurfacesPhysical Review Letters, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Local vibrational modes in Mg-doped gallium nitridePhysical Review B, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Theory of hydrogen diffusion and reactions in crystalline siliconPhysical Review B, 1989
- Microscopic structure of the hydrogen-boron complex in crystalline siliconPhysical Review B, 1989
- Theory of hydrogen passivation of shallow-level dopants in crystalline siliconPhysical Review Letters, 1988
- Special Points in the Brillouin ZonePhysical Review B, 1973