Fabrication of Multilayer Barrier Layer Capacitors with Semiconducting (Ba, Sr)TiO3 Ceramics

Abstract

Multilayer barrier layer capacitors were successfully fabricated by utilizing potential barriers at grain boundaries of semiconducting (Ba,Sr)TiO₃ ceramics in the temperature region above the Curie point of -140°C. A small amount of Mn improved the dissipation factor and temperature dependence of permittivity in the temperature region from -30°C to 100°C. Multilayer barrier layer capacitors were composed of 10 layers having 80-µm thickness per layer. Resistivity above 10¹⁰ Ω·cm was attained at room temperature, and relative permittivities above 5500 and dissipation factors less than 2% were obtained in the temperature region from -30°C to 100°C.