Switching Speed and Dissipation in Fast, Thin-Film Cryotron Circuits
- 1 December 1962
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 50 (12), 2452-2464
- https://doi.org/10.1109/jrproc.1962.288263
Abstract
As thin-film cryotron circuits become faster, the detailed properties of the components themselves have an increasing effect on over-all circuit operation. When a cryotron switches from the superconducting to the resistive state in a fast circuit, its inductive characteristics can change enough to add appreciable delay and dissipation to its driving circuit. The inductive and resistive transition of the component can be accompanied by diamagnetic hysteresis and by eddy-current-damping effects, which add to dissipation and further delay the switching of the component. These component and circuit effects are complex and interrelated, but considerable insight is gained by analyzing separately various portions of the general behavior.Keywords
This publication has 8 references indexed in Scilit:
- Inductance in Thin-Film Superconducting StructuresProceedings of the IRE, 1961
- Recent developments in high speed superconducting devicesBritish Journal of Applied Physics, 1961
- Edge effects in superconducting filmsSolid-State Electronics, 1960
- An Improved Film Cryotron and Its Application to Digital ComputersProceedings of the IRE, 1960
- On the Influence of Aggregation on the Magnetic Phase Transition of Evaporated Superconducting Thin FilmsIBM Journal of Research and Development, 1960
- Superconducting to Normal Phase Transition in TantalumPhysical Review B, 1958
- A magnetically controlled gating elementPublished by Association for Computing Machinery (ACM) ,1957
- IXXI. Kinetics of the phase transition in superconductorsJournal of Computers in Education, 1950