Properties of GaP Schottky barrier diodes at elevated temperatures
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5), 341-346
- https://doi.org/10.1016/0038-1101(69)90089-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966
- Single crystal gallium phosphide solar cellsAdvanced Energy Conversion, 1965