Long‐wavelength InAs1−xSbx photoconductors operated without cryogenic cooling are reported. The devices are based on p‐InAs1−xSbx/p‐InSb heterostructures grown on (100) semi‐insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP‐MOCVD). Photoreponse up to 14 μm has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of ≊0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at λ=10.6 μm is estimated to be about 3.27×107 cm Hz1/2/W at 300 K.