Doping of highly tetrahedral amorphous carbon
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 1119-1122
- https://doi.org/10.1016/0022-3093(93)91195-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Compressive-stress-induced formation of thin-film tetrahedral amorphous carbonPhysical Review Letters, 1991
- Amorphous diamond-Si semiconductor heterojunctionsApplied Physics Letters, 1991
- Ion flux from the cathode region of a vacuum arcIEEE Transactions on Plasma Science, 1989