High Precision Measurements of the Quantized Hall Resistance at the PTB
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. IM-34 (2), 304-305
- https://doi.org/10.1109/tim.1985.4315330
Abstract
Quantized Hall resistances in GaAs-GaAlAs heterostructures and Si MOSFET's have been investigated. The influence of the sample temperature, the step number, and the material was found to be less than 3 parts in 108.Keywords
This publication has 1 reference indexed in Scilit:
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980