Dependence of the hopping-conductivity exponent on band shape for two-dimensional impurity bands
- 1 January 1981
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (1), 173-175
- https://doi.org/10.1080/01418638108225811
Abstract
The temperature dependence of the conductivity exponent s p is evaluated for half-filled two-dimensional impurity bands. For rectangular, triangular and Gaussian band shapes the activation energy at intermediate temperatures is 0·33, 0·4 and 0·48n s/ρF, respectively, where n s is the density of sites and ρF is the peak density of states.Keywords
This publication has 4 references indexed in Scilit:
- Carrier-density dependence of the activation energies associated with hopping in two-dimensional impurity bandsPhilosophical Magazine Part B, 1980
- Analysis of hopping conduction in impurity bands in inversion layersPhilosophical Magazine Part B, 1978
- Oxide-Charge-Induced Impurity Level in Silicon Inversion LayersPhysical Review Letters, 1975
- High temperature 'variable range hopping' conductivity in silicon inversion layersJournal of Physics C: Solid State Physics, 1975