Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sources
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9), 833-835
- https://doi.org/10.1063/1.93690
Abstract
A novel method is described for measuring the carrier lifetimes in double heterostructure light-emitting diodes (LED’s) and lasers. The improved resolution of the technique permits the first reported measurement of the carrier dependence of the radiative recombination coefficient. The technique also provides a reliable measurement of the active region doping level which is in very good agreement with the values calculated from the composition of the growth solutions.Keywords
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