Amorphous hydrogenated silicon films prepared from a glowdischarge
- 1 December 1980
- journal article
- Published by Springer Nature in Bulletin of Materials Science
- Vol. 2 (5), 317-324
- https://doi.org/10.1007/bf02908578
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Determination of the density of states of a-Si:H using the field effectJournal of Non-Crystalline Solids, 1980
- A DLTS study of the gap states of amorphous Si1−xHx alloysJournal of Non-Crystalline Solids, 1980
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Influence of preparation conditions on forward-bias currents of amorphous silicon Schottky diodesJournal of Applied Physics, 1979
- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- On the deposition of amorphous silicon films from glow discharge plasmas of silaneThin Solid Films, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969