SiO2 films have been deposited on Si wafers at a substrate temperature of 300°C and a pressure of 10-2 Pa using the Ionized Nozzle-Beam Deposition (INBD) technique. SiO grains were used as the deposition material. The refractive index and infrared absorption spec-trum of the deposited SiO 0 films resembled to those of the SiO2 films deposited using SiO2 as the source material. We found that the film quality was improved significantly after a short time furnace annealing (800°C, 10 minutes).