Barium titanate (BaTiO3) was deposited onto Pt foil, and onto thin-film Pt and Pt-Rh electrodes on sapphire, and counterelectroded to complete metal-dielectric-metal structures. Dielectrics (5000–60 000 Å) were deposited at substrate temperatures from 23 ° to 1000 °C, some fired in air at temperatures to 1400 °C after deposition, the films providing a wide range of dielectric constants (16–1900). Onset of BaTiO3 crystal growth was detected at 500 °C, a reduced BaTiO3 detected at 1000 °C, and constant Ba/Ti ratios measured over the deposition temperature range. Capacitance increase with temperature was essentially linear, with the fired dielectrics showing minimum slope. Tanδ varied from 0.005 for amorphous films to 0.065 for films with highest dielectric constants, with related dielectric strengths of 1.8×106 to ≈0.15×106 V/cm, respectively. Substrate, electrode, and process limitations for capacitor fabrication are defined.