Angle-resolved time-of-flight spectra of neutral particles desorbed from laser irradiated CdS
- 1 February 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 166 (1), 129-140
- https://doi.org/10.1016/0039-6028(86)90536-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Temperature Dependence of Desorption in Highly Photo-Excited CdSJournal of the Physics Society Japan, 1985
- Laser-induced sputtering of ZnO, TiO2, CdSe and GaP near threshold laser fluenceSurface Science, 1983
- Role of electron-hole pairs in the mechanisms of desorption from semiconductor surfacesSurface Science, 1983
- Pulsed laser annealing of GaAs and Si: Combined reflectivity and time-of-flight measurementsJournal of Applied Physics, 1983
- Mechanism of neutral particle emission from electron-hole plasma near solid surfacePhysics Letters A, 1982
- Instability of the Electron-Hole Plasma in SiliconPhysical Review Letters, 1982
- Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulsesApplied Physics Letters, 1981
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981
- Dynamics of dense laser-induced plasmasPhysical Review B, 1980
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979