A balanced sub-millimeter wave power amplifier
- 1 June 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, a new balanced sub-millimeter wave power amplifiers is presented. The amplifier uses CPW-grounded MIM capacitors to form low-loss, lumped element matching networks and uses a branchline coupler to achieve requisite quadrature phase shifts. The balanced amplifier achieves 12-dB small signal gain and 6.1-mW output power (not saturated) at a center frequency of 270-GHz. The high gain allows the amplifier to reach a moderate Power Added Efficiency (PAE) of 5.25% at the highest drive power. The results in this paper are the highest reported output powers achieved from a solid state amplifier at these frequencies, and were achieved with a high fMAX InP HEMT process.Keywords
This publication has 7 references indexed in Scilit:
- First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave FrequenciesIEEE Microwave and Wireless Components Letters, 2008
- Development of Sub-Millimeter-Wave Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 2007
- High-Efficiency Terahertz Frequency TriplersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A 20-mW G-band Monolithic Driver Amplifier Using 0.07-μm InP HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- On-Wafer Vector Network Analyzer Measurements in the 220-325 GHz Frequency BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Opening the terahertz window with integrated diode circuitsIEEE Journal of Solid-State Circuits, 2005
- G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2005