Retardation of Diffusion by Diffusion-Induced Dislocation in Silicon
- 1 March 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (3), 338-339
- https://doi.org/10.1143/jjap.9.338
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Observations of Dislocations in Phosphorus-Diffused Silicon by X-Ray and Etching TechniquesJapanese Journal of Applied Physics, 1968
- Effects of High Phosphorus Concentration on Diffusion into SiliconJournal of the Electrochemical Society, 1968
- Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in SiliconJapanese Journal of Applied Physics, 1964
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962