Magnetic and electronic properties in hole-doped manganese oxides with layered structures: La1−xSr1+xMnO4

Abstract

Electrical resistivity (ρ) and magnetic susceptibility (χ) were measured for single crystals of ${\mathrm{La}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Sr}}_{1+\mathit{x}}$ ${\mathrm{MnO}}_4$ (0.0≤x≤0.7), which were grown by the floating-zone method with varying the nominal hole concentration (x). With hole doping, critical temperature (${\mathit{T}}_{\mathit{N}}$) for the antiferromagnetic phase transition decreases and eventually a spin-glass phase appears for x≥0.2, perhaps due to the competition between the generic antiferromagnetic superexchange interaction and the ferromagnetic double-exchange interaction. At x≊1/2, real-space ordering of the doped holes occurs at ∼220 K, accompanying a steep increase of ρ as well as a suppression of χ.