Iron doping in gallium arsenide by molecular beam epitaxy
- 15 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (12), 1094-1096
- https://doi.org/10.1063/1.91884
Abstract
Iron‐doped GaAs layers have been grown by molecular beam epitaxy (MBE) over a substrate temperature range of 460–540 °C with incident 56Fe levels of 2×108–2×1011 atoms cm−2 sec−1. Photoluminescence studies indicate that iron can be incorporated on Ga sites in MBE GaAs. A pronounced accumulation of Fe at the outer epi‐layer surface is observed in secondary‐ion mass spectroscopy profiles of heavily doped samples. This accumulation leads to appreciable donor compensation in n‐type GaAs subsequently grown.Keywords
This publication has 15 references indexed in Scilit:
- Deep emission centers in Ge-implanted GaAsJournal of Applied Physics, 1979
- High-purity GaAs and Cr-doped GaAs epitaxial layers by MBEJournal of Applied Physics, 1979
- Unintentional dopants incorporated in GaAs layers grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1979
- Growth temperature dependence in molecular beam epitaxy of gallium arsenideJournal of Crystal Growth, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Surface segregation of Sn during MBE of n-type GaAs established by SIMS and AESJournal of Vacuum Science and Technology, 1978
- Growth of Iron‐Doped Epitaxial Layers for GaAs Field Effect TransistorsJournal of the Electrochemical Society, 1977
- Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxyJournal of Applied Physics, 1977
- Molecular beam epitaxial GaAs layers for MESFET’sApplied Physics Letters, 1976
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975