Backside-illuminated HgCdTe/CdTe photodiodes
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1), 50-52
- https://doi.org/10.1063/1.90595
Abstract
This letter reports the first realization of backside‐illuminated HgCdTe/CdTe photodiodes prepared by a liquid‐phase‐epitaxy technique. The thermal noise of these diodes is lower than that of bulk HgCdTe diodes fabricated under otherwise similar conditions. This is explained by an analytical model based on material parameters and the geometry of n+‐p diodes.Keywords
This publication has 3 references indexed in Scilit:
- Minority-carrier-lifetime determination in Hg0.68Cd0.32TeJournal of Applied Physics, 1978
- Infrared Photodiode Optimization For Higher Temperature OperationPublished by SPIE-Intl Soc Optical Eng ,1978
- Infrared focal planes in intrinsic semiconductorsIEEE Transactions on Electron Devices, 1978