Prevention of InP surface decomposition in liquid phase epitaxial growth
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1), 64-65
- https://doi.org/10.1063/1.91702
Abstract
Decomposition of InP prior to and following liquid phase epitaxial growth can be completely eliminated by locally providing an increase in P partial pressure compared to that at the InP liquidus. The increase of P partial pressure is a result of increased P solubility in In‐Sn‐P solutions.Keywords
This publication has 4 references indexed in Scilit:
- Control of substrate degradation IN InP LPE growth with PH3 partial pressureJournal of Crystal Growth, 1979
- Solubilities of InP and CdS in Cd, Sn, In, Bi, and PbJournal of Crystal Growth, 1976
- Phase relations, crystal growth and heteroepitaxy in the quaternary system Cd, Sn, In and PJournal of Crystal Growth, 1974
- Phase equilibria and vapor pressures of the system In+PThe Journal of Chemical Thermodynamics, 1970