Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC
- 1 November 1999
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 33 (11), 1188-1192
- https://doi.org/10.1134/1.1187846
Abstract
The methods of capacitance and current deep level transient spectroscopy are used to investigate single crystals of Leli n-SiC(6H) irradiated by 5-MeV electrons at doses of 1016–1018 cm−2. Eleven deep levels belonging to the resulting radiation-induced intrinsic defects were observed in the energy range 0.18–1.44 eV from the bottom of the conduction band. Isochronous annealing of various samples showed that most of the observed defects were stable up to a temperature of ∼1000 °C. In addition, annealing of a deep level with ionization energy Ei=0.48–0.53 eV was observed in the temperature range 150–250 °C. It is believed that this center is caused by a vacancy in the carbon sublattice.Keywords
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