Two Reaction Model of Interface Trap Annealing
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6), 1198-1202
- https://doi.org/10.1109/tns.1986.4334578
Abstract
Interface trap anneal kinetics have been studied using capacitance - voltage measurements and rapid thermal annealing. Power law kinetics have been obtained for aluminum gate devices. Anneal kinetics have been studied as a function of oxide thickness, anneal ambient, radiation damage, substrate orientation, bulk conductivity type, and temperature. A two - reaction model is proposed to explain the observed kinetics.Keywords
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