Defects and impurities in thermal oxides on silicon
- 1 August 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3), 251-253
- https://doi.org/10.1063/1.93484
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interfaceJournal of Vacuum Science and Technology, 1981
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS StructuresIEEE Transactions on Nuclear Science, 1981
- Relationship between trapped holes and interface states in MOS capacitorsApplied Physics Letters, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Two-stage process for buildup of radiation-induced interface statesJournal of Applied Physics, 1979
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Sodium mobility in irradiated SiO2IEEE Transactions on Nuclear Science, 1974
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971