Electrical Characterization of Vertical InAs Nanowires on Si

1 June 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 15483770,p. 135-136
https://doi.org/10.1109/drc.2007.4373686

Abstract

In this paper, electrical characterization of the InAs NWs and the InAs/Si heterojunctions was performed on all three differently doped Si substrates.

Keywords

NANOWIRES
SUBSTRATES
DOPING
WIRES
GOLD
PLASMA TEMPERATURE
RESISTS
ETCHING
SILICON
CONTACT RESISTANCE

Cited by 2 articles