Generalization of computer simulation of dislocation emission under constant rate of stress application

Abstract

Generalization of computer simulation of dislocation groups emission with the dislocation velocity‐stress relation of power type: v=Mτ^m under constant rate of stress application has been attempted, such as for the value of m ranging between 1 and 6.4. For metals in which the velocity of an isolated dislocation is given by a thermally activated process, the number of dislocations emitted up to time t is expressed in terms of single apparent rate process and the activation energy is a constant multiple [such as (m+1)/(m+2) or m/(m+2)] of the activation energy for the motion of an isolated dislocation. The mean mobile dislocation density along one slip plane was obtained, and its temperature and strain rate dependence are in good agreement with the semiexperimental results in literature.