Realization of ultrahigh coherence in semiconductor lasers by negative electrical feedback
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (2), 245-256
- https://doi.org/10.1109/50.3996
Abstract
No abstract availableThis publication has 48 references indexed in Scilit:
- Theory of a negative frequency feedback semiconductor laserIEEE Journal of Quantum Electronics, 1985
- Estimation of linewidth enhancement factor of AlGaAs lasers by correlation measurement between FM and AM noisesIEEE Journal of Quantum Electronics, 1985
- Accurate Wavelength Measurements of the Absorption Lines in H2O Vapor by a 0.8 µm AlGaAs LaserJapanese Journal of Applied Physics, 1984
- Coherence properties of gain- and index-guided semiconductor lasersIEEE Journal of Quantum Electronics, 1983
- Optical feedback effects upon laser diode oscillation field spectrumIEEE Journal of Quantum Electronics, 1982
- Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuationsApplied Physics Letters, 1982
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- LASER FREQUENCY STABILIZATION BY SATURATED ABSORPTIONLe Journal de Physique Colloques, 1981
- External optical feedback effects on semiconductor injection laser propertiesIEEE Journal of Quantum Electronics, 1980
- Multiple-valued stationary state and its instability of the transmitted light by a ring cavity systemOptics Communications, 1979