Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate
- 15 October 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (8), 5377-5380
- https://doi.org/10.1103/physrevb.34.5377
Abstract
The oxidation of Si(100) surfaces covered with 3 Å Ce was studied by high-resolution photoemission spectroscopy. The oxygen uptake was found to be enhanced by orders of magnitude by the presence of Ce. Because of chemical reaction between Ce and Si, a mixed oxide with a Ce:Si:O composition ratio of 1:1:3 is formed. The sharp photoemission spectra of this oxide indicate the formation of a well-defined compound in which both Ce and Si are in a 3+ oxidation state.Keywords
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